AT49BV1614

16-Megabit, 1M x 16/2M x 8, 3-volt Only Flash Memory, smd, 2.7V to 3.6V Read/Write, 90 ns Access Time

Rated 5 Rating 5 | reviews | Write a review

Price:: US $1.00~2.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $1.00~2.00

PartNumber:: AT49BV1614

Brand:: ATMEL Corporation - ATMEL | Pack: SMD | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Elaine Huang's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2011-10-10

From Other Seller

Part Number:AT49BV1614
US $1.00 - 2.00
EKY-160ELL121MF11D

US $0.10 - 1.00 / Piece
(0) Remove
HEF4051BT

US $0.15 - 1.20 / Piece
(0) Remove
Quantity:

piece

Product Summary

The AT49BV1614 is a 2.7 to 3.6 volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 40 blocks for erase operations. The device is offered in 48-pin TSOP and 48-ball mBGA packages. The AT49BV1614 has CE, and OE control signals to avoid any bus contention. This AT49BV1614 can be read or reprogrammed using a single 2.7V power supply, making it ideally suited for in-system programming.

Parametrics

AT49BV1614 absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)All Input Voltages (including NC Pins) with Respect to Ground: -0.6V to +6.25V; (4)All Output Voltages with Respect to Ground: -0.6V to VCC + 0.6V; (5)Voltage on OE with Respect to Ground: -0.6V to +13.5V.

Features

AT49BV1614 features: (1)2.7V to 3.6V Read/Write; (2)Access Time: 90 ns; (3)Sector Erase Architecture; (4)Fast Word Program Time: 20 μs; (5)Fast Sector Erase Time: 200 ms; (6)Dual Plane Organization, Permitting Concurrent Read while Program/Erase; (7)Erase Suspend Capability; (8)Supports Reading/Programming Data from Any Sector by Suspending Erase of; (9)Any Different Sector; (10)Low Power Operation: 25 mA Active; 10 mA Standby; (11)Data Polling, Toggle Bit, Ready/Busy for End of Program Detection; (12)Optional VPP Pin for Fast Programming; (13)RESET Input for Device Initialization; (14)Sector Program Unlock Command; (15)TSOP, CBGA, and mBGA Package Options; (16)Top or Bottom Boot Block Configuration Available.