(China (Mainland))
Product Summary
The BSM300GA170DN2 is an IGBT power module.
Parametrics
BSM300GA170DN2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1700V; (2)Collector-gate voltage RGE = 20 kW, VCGR: 1700V; (3)Gate-emitter voltage VGE: ± 20V; (4)DC collector current, IC, TC = 25 ℃: 440A, TC = 80 ℃: 300A; (5)Power dissipation per IGBT, Ptot, TC = 25 ℃: 2500W; (6)Chip temperature Tj: + 150 ℃; (7)Storage temperature Tstg: -55 to +150; (8)Thermal resistance, chip case RthJC ≤ 0.05 K/W; (9)Diode thermal resistance, chip case RthJCD ≤ 0.1; (10)Insulation test voltage, t = 1min. Vis: 4000 Vac.
Features
BSM300GA170DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Enlarged diode area; (4)Package with insulated metal base plate; (5)RG on,min = 5.6 Ohm.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM300GA170DN2 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 440A |
Data Sheet |
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BSM300GA170DN2 E3166 |
Other |
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Data Sheet |
Negotiable |
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BSM300GA170DN2S |
Infineon Technologies |
IGBT Modules 1700V 300A SINGLE |
Data Sheet |
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BSM300GA170DN2S_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1700V 300A |
Data Sheet |
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BSM300GA170DN2_E3166 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 440A |
Data Sheet |
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