(China (Mainland))
Product Summary
The DU2860U is a RF Power MOSFET Transistor.
Parametrics
DU2860U asbolute maximum ratings: (1)Drain-Source Voltage:65V; (2)Gate-Source Voltage:20V; (3)Drain-Source Current:12A ; (4)Power Dissipation:159W; (5)Junction Temperature:200℃ ; (6)Storage Temperature:-55℃ to +150℃; (7)Thermal Resistance:1.1℃/W.
Features
DU2860U features: (1)N-Channel enhancement mode device ; (2)DMOS structure ; (3)Lower capacitances for broadband operation ; (4)High saturated output power ; (5)Lower noise figure than bipolar devices.
Diagrams
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 DU2860U |
Other |
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Data Sheet |
Negotiable |
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DU2805S |
Other |
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Negotiable |
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Other |
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Negotiable |
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DU28120T |
Other |
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Data Sheet |
Negotiable |
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DU2812OV |
Other |
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Data Sheet |
Negotiable |
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DU28200M |
Other |
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Data Sheet |
Negotiable |
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DU2820S |
Other |
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Data Sheet |
Negotiable |
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