Product Summary
The FGA25N120ANTD is a 1200V NPT trench IGBT. Using Fairchilds proprietary trench design and advanced NPT technology, the 1200V NPT IGBT FGA25N120ANTD offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. The FGA25N120ANTD is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
Parametrics
FGA25N120ANTD absolute maximum ratings: (1)ICM Pulsed Collector Current: 90 A; (2)IF Diode Continuous Forward Current @ TC = 100℃: 25 A; (3)IFM Diode Maximum Forward Current: 150 A; (4)PD Maximum Power Dissipation @ TC = 25℃: 312 W; (5)Maximum Power Dissipation @ TC = 100℃: 125 W; (6)TJ Operating Junction Temperature: -55 to +150 ℃; (7)Tstg Storage Temperature Range: -55 to +150 ℃.
Features
FGA25N120ANTD features: (1)NPT Trench Technology, Positive temperature coefficient; (2)Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25℃; (3)Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25℃; (4)Extremely enhanced avalanche capability.
Diagrams
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FGA25N120ANTD |
Other |
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FGA25N120ANTDTU |
Fairchild Semiconductor |
IGBT Transistors Copak Discrete |
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FGA25N120ANTDTU_F109 |
Fairchild Semiconductor |
IGBT Transistors Copak Discrete |
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