Product Summary

The MRF151G is a RF Power Field-Effect Transistor. It is designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of MRF151G makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Parametrics

MRF151G absolute maximum ratings: (1)drain-source voltage: 125 V; (2)drain-gate voltage: 125 V; (3)gate-source voltage: ±40 V; (4)drain current-continous: 40 A; (5)total device dissipation @ Tc=25 ℃: 500 W; (6)storage temperature range: -65 to +150 ℃; (7)operating junction temperature: 200 ℃.

Features

MRF151G features: (1)Output Power 300 W; (2)Gain 14 dB (16 dB Typ); (3)Efficiency 50%; (4)Low Thermal Resistance 0.35℃/W; (5)Ruggedness Tested at Rated Output Power; (6)Nitride Passivated Die for Enhanced Reliability.

Diagrams

MRF151G diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF151G
MRF151G
M/A-COM Technology Solutions
Transistors RF MOSFET Power 5-175MHz 300Watts 50Volt Gain 14dB
Data Sheet
0-1: $75.00
1-10: $72.60
10-25: $70.20
25-50: $56.73
MRF151GB
MRF151GB
Advanced Semiconductor, Inc.
Transistors RF MOSFET Power RF Transistor
Data Sheet
0-1: $75.00
1-10: $72.60
10-25: $70.20
25-50: $56.73
MRF151GC
MRF151GC
Advanced Semiconductor, Inc.
Transistors RF MOSFET Power RF Transistor
Data Sheet
0-1: $75.00
1-10: $72.60
10-25: $70.20
25-50: $56.73