(China (Mainland))
Product Summary
The blf647 is a UHF power LDMOS transistor. It is a silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.
Parametrics
blf647 absolute maximum ratings: (1)VDS drain-source voltage: 65 V; (2)VGS gate-source voltage: ±15 V; (3)ID drain current (DC): 18 A; (4)Ptot total power dissipation Tmb ≤ 25 ℃: 290 W; (5)Tstg storage temperature: -65 +150 ℃; (6)Tj junction temperature: 200 ℃.
Features
blf647 features: (1)High power gain; (2)Easy power control; (3)Excellent ruggedness; (4)Source on underside eliminates DC isolators, reducing common mode inductance; (5)Designed for broadband operation (HF to 800 MHz); (6)Internal input damping for excellent stability over the whole frequency range.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
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 BLF647 |
Other |
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Data Sheet |
Negotiable |
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BLF647,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 150W UHF |
Data Sheet |
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BLF647A |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
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BLF647A,112 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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