IRF630N

Power MOSFET, Advanced Process Technology, Dynamic dv/dt Rating, 220V, TO-220

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PartNumber:: IRF630N

Brand:: International Rectifier - IR | Pack: DIP | D/C: 11+

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Products Upload time: 2011-10-04

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Product Summary

The IRF630N is a Power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF630N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRF630N provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

Parametrics

IRF630N absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V:9.3A; (2)Continuous Drain Current, VGS @ 10V:6.5A; (3)Pulsed Drain Current:37A; (4)Power Dissipation 82 W; (5)Linear Derating Factor:0.5 W/℃; (6)Gate-to-Source Voltage:±20 V; (7)Single Pulse Avalanche Energy:94 mJ; (8)Avalanche Current:9.3 A; (9)Repetitive Avalanche Energy:8.2 mJ; (10)Peak Diode Recovery dv/dt:8.1 V/ns; (11)Operating Junction and Storage Temperature Range:-55℃ to +175℃; (12)Soldering Temperature, for 10 seconds:300℃ (1.6mm from case ).

Features

IRF630N features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements.