TLP785

Photocoupler, DIP, 60 mA, high isolation voltage, 150 mW

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PartNumber:: TLP785

Brand:: Toshiba Semiconductor - Toshiba | Pack: DIP | D/C: 10+

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Products Upload time: 2011-10-10

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Product Summary

The TOSHIBA TLP785 is a TOSHIBA Photocoupler. It consists of a silicone photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)).

Parametrics

TLP785 absolute maximum ratings: (1)Forward current: 60 mA; (2)Forward current derating: -0.7 (Ta ≥ 25℃) mA/℃; (3)Pulse forward current: 1 A; (4)Reverse voltage: 5 V; (5)Junction temperature: 125 ℃; (6)Collector-emitter voltage: 80 V; (7)Emitter-collector valtage: 7 V; (8)Collector current: 50 mA; (9)Collector power dissipation: 150 mW; (10)Junction temperature: 125 ℃; (11)Storage temperature range: -55~125 ℃; (12)Lead soldering temperature: 260 ℃.

Features

TLP785 features: (1)TLP785 : 7.62mm pitch type DIP4; (2)TLP785F : 10.16mm pitch type DIP4; (3)Collector-emitter voltage: 80V (min.); (4)Current transfer ratio: 50% (min.), Rank GB: 100% (min.); (5)Isolation voltage: 5000Vrms (min.); (6)UL under application: UL1577, file No. E67349; (7)BSI under application: BS EN60065:2002, BS EN60950-1:2006; (8)SEMKO under application:EN60065:2002, EN60950-1:2001, EN60335-1:2002.